S9S08LG16J0VLF View Datasheet(PDF) - Freescale Semiconductor
Part Name
Description
MFG CO.
'S9S08LG16J0VLF' PDF : 50 Pages View PDF
Electrical Characteristics
Table 7. ESD and Latch-Up Protection Characteristics
No.
Rating1
Symbol
Min
Max
Unit
1 Human body model (HBM)
VHBM
2500
—
V
2 Charge device model (CDM)
VCDM
750
—
V
3 Latch-up current at TA = 85 °C
ILAT
±100
—
mA
1 Parameter is achieved by design characterization on a small sample size from typical devices
under typical conditions unless otherwise noted.
2.6 DC Characteristics
This section includes information about power supply requirements and I/O pin characteristics.
Table 8. DC Characteristics
Num C
Characteristic
Symbol
Min
1 — Operating Voltage
—
2.7
2 P Output high voltage — Low Drive (PTxDSn = 0)
VOH
5 V, ILoad = –2 mA
3 V, ILoad = –0.6 mA
Output high voltage — High Drive (PTxDSn = 1) V
5 V, ILoad = –10 mA
3 V, ILoad = –3 mA
3 P Output low voltage — Low Drive (PTxDSn = 0)
VOL
5 V, ILoad = 2 mA
3 V, ILoad = 0.6 mA
Output low voltage — High Drive (PTxDSn = 1)
5 V, ILoad = 10 mA
3 V, ILoad = 3 mA
4 P Output high current — Max total IOH for all ports
IOHT
5V
3V
5 C Output high current — Max total IOL for all ports
IOLT
5V
3V
VDD – 0.8
VDD – 0.8
VDD – 0.8
VDD – 0.8
—
—
—
6 P Bandgap voltage reference
VBG
7 P Input high voltage; all digital inputs
VIH
8 P Input low voltage; all digital inputs
VIL
9 P Input hysteresis; all digital inputs
10 P Input leakage current; input only pins2
VIn = VDD or VSS
Vhys
|IIn|
11 P High impedence (off-state) leakage current
|IOZ|
VIn = VDD or VSS
12 P Internal pullup resistors3
RPU
13 P Internal pulldown resistors4
RPD
—
0.65 x VDD
—
0.06 x VDD
—
—
20
20
Typ1
—
—
—
Max Unit
5.5
V
V
—
—
—
—
—
—
V
—
0.8
—
0.8
—
0.8
—
0.8
—
mA
100
60
—
mA
100
60
1.225
—
V
—
—
V
— 0.35 x VDD V
—
—
mV
0.1
1
μA
0.1
1
μA
45
65
kΩ
45
65
kΩ
MC9S08LG32 Series Data Sheet, Rev. 7
Freescale Semiconductor
13
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