SC1218STRT View Datasheet(PDF) - Semtech Corporation
Part Name
Description
MFG CO.
'SC1218STRT' PDF : 12 Pages View PDF
SC1218
POWER MANAGEMENT
Absolute Maximum Ratings
Exceeding the specifications below may result in permanent damage to the device, or device malfunction. Operation outside of the parameters specified in the
Electrical Characteristics section is not implied.
Parameter
Symbol
Conditions
Maximum
Units
VIN Supply Voltage
BST to DRN
BST to VIN
TG to DRN
TG to DRN Pulse
BST to PGND
BST to PGND Pulse
DRN to PGND
DRN to PGND Pulse
BG to PGND
BG to PGND Pulse
PWM Input
Enable Input
Continuous Power Dissipation
TA=25oC, TJ=125oC
VI N
VBST-DRN
VBST-VIN
VTG-DRN
VTG-DRN-PULSE
VBST-PGND
VBST-PGND-PULSE
VDRN-PGND
VDRN-PGND-PULSE
VBG-PGND
VBG-PGND-PULSE
CO
EN
PD
VPEAK with tPULSE < 20ns(1)
tPULSE <20ns
VBST-VDRN = 10V
VPEAK with tPULSE < 200ns(1)
VPEAK with tPULSE < 20ns(1)
VPEAK with tPULSE < 20ns(1)
SOIC-8
MLPQ-8
-0.3 to 16
-0.3 to 16
-0.3 to 16
-0.3 to 16
-2
-0.3 to VIN+16
38
-2 to VIN+16
-5 to 35
-8 to 35
-0.3 to VIN+0.3
-3.5
-0.3 to VIN+0.3
-0.3 to VIN+0.3
0.5
2.56
SOIC-8
40
Thermal Resistance Junction to Case
θJC
MLPQ-8
8
Junction Temperature Range
TJ
0 to 150
Storage Temperature Range
TSTG
-65 to 150
SOIC-8
300
Lead Temperature (Soldering) 10 Sec.
TLEAD
MLPQ-8
260
Notes:
(1) Pulse width measured at 10% of the triangular spike waveform.
(2) This device is ESD sensitive. Use of standard ESD handling precautions is required.
Electrical Characteristics
Unless specified: TA = 25°C; VIN = 12V.
Parameter
Symbol
Conditions
Min
Typ
Max
V
V
V
V
V
V
V
V
V
V
V
V
V
V
W
oC/W
oC
oC
oC
oC
Units
Power Supply
Supply Voltage
VI N
5
12
14
V
EN=5V; CO=0V
3.35
4.4
mA
VI N Quiescent Current
2005 Semtech Corp.
IQ
EN=5V; CO=5V
EN=0V
2
2.9
1.35
4
mA
2.5
mA
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