SC486EVB View Datasheet(PDF) - Semtech Corporation
Part Name
Description
MFG CO.
'SC486EVB' PDF : 26 Pages View PDF
SC486
POWER MANAGEMENT
Electrical Characteristics (Cont.)
Test Conditions: VBAT = 15V, VCCA = VDDP = VTTEN = EN/PSV = 5V, VDDQ = VTTIN = 1.8V, RTON = 1MΩ
Parameter
Conditions
25°C
-40°C to 125°C Units
Min Typ Max Min Max
Gate Drives (Cont.)
DL Pull-Up Resistance
DL high
2
4
Ω
DL Source Current
DH Pull-Down Resistance
VDL = 2.5V
1.3
DH low, BST - LX = 5V
2
A
4
Ω
DH Pull-Up Resistance(8)
DH high, BST - LX = 5V
2
4
Ω
DH Sink/Source Current
VTT Pull-Up Resistance
VDH = 2.5V
VTTS < REF
1.3
0.25
A
0.45
Ω
VTT Pull-Down Resistance
VTTS > REF
0.25
0.45
Ω
VTT Peak Sink/Source Current (9)
3.6
2.0
A
Notes:
(1) The output voltage will have a DC regulation level higher than the error-comparator threshold by 50% of the
ripple voltage.
(2) Using a current sense resistor, this measurement relates to PGND1 minus the voltage of the source on the
low-side MOSFET.
(3) clks = switching cycles, consisting of one high side and one low side gate pulse.
(4) Guaranteed by design.
(5) Thermal shutdown latches both outputs (VTT and VDDQ) off, requiring VCCA or EN/PSV cycling to reset.
(6) VTT soft start ramp rate is 6mV/µs typical unless VDDQ/2 ramp rate is slower. If this is true, VTT soft start
ramps at 6mV/µs (typ.) until it reaches VDDQ/2, and then tracks it.
(7) See Shoot-Through Delay Timing Diagram below.
(8) Semtech’s SmartDriver™ FET drive first pulls DH high with a pull-up resistance of 10Ω (typ.) until LX = 1.5V
(typ.). At this point, an additional pull-up device is activated, reducing the resistance to 2Ω (typ.). This negates the
need for an external gate or boost resistor.
(9) Provided operation below TJ(MAX) is maintained.
(10) This device is ESD sensitive. Use of standard ESD handling precautions is required.
Shoot-Through Delay Timing Diagram
LX
DH
DL
tplhDL
DL
tplhDH
2006 Semtech Corp.
5
www.semtech.com
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