SCS152 View Datasheet(PDF) - Microchip Technology
Part Name
Description
MFG CO.
'SCS152' PDF : 16 Pages View PDF
SCS152
8.0 DEVICE CHARACTERISTICS
TABLE 8-1: ABSOLUTE MAXIMUM RATINGS
Description
Symbol
Min.
Supply voltage, with respect to GND
VDD
-0.3
Input voltage, with respect to GND
VI
-0.3
Storage temperature
TS
-55
ESD protection on all pins (HBM)
VESD
—
TABLE 8-2: DC CHARACTERISTICS
VDD: 5.0 V ± 10%
TA: -40°C to +85°C
Description
Symbol Min.
Current when reading
IDDR
—
Current when programming
IDDP
—
Input low voltage
VIL
—
Input high voltage
VIH
3.0
Output low voltage
VOL
—
Typ.
300
1.2
—
—
—
Max.
600
1.6
0.8
—
0.4
TABLE 8-3: AC CHARACTERISTICS
VDD: 5 V ± 10%
TA: -40°C to +85°C
RPU = 10K
Description
Time from VDD high until device accepts com-
mands
Overlap of SCI with SCK during RESET
Overlap period of SCI and SCK during RESET
SCK high
SCK low
SCK/SCI falling to SCI changing for BITPROG,
ERASE, etc.
SCI high pulse during BITPROT, ERASE, etc.
SDIO changing from falling edge of SCI/SCK
during RESET
SDIO changing from falling edge of SCK during
RDBIT
SDIO tri-state after rising edge of SCK
Time to program EEPROM during BITPROG,
ERASE, DECR-ERASE, etc.
Time to compute signature from falling edge of
SCK where last challenge bit is entered
Symbol
TPOR
TOX
TR
TH
TL
TC
TS
TD1
TD2
TD3
TPROG
TSIGN
Min.
—
2.0
35.0
10.0
10.0
5.0
2.0
—
—
1.4
—
Max.
6.0
6.0
+85
4000
Units
V
V
°C
V
Units
µA
mA
V
V
V
Condition
SDIO = VDD
SDIO = VDD
Sinking current, Io = 1 mA
Typ.
—
—
—
—
—
—
—
1.8
1.8
4.5
—
—
Max.
3.5
—
—
—
—
—
—
—
4.7
—
3.4
2.5
Units
ms
µs
µs
µs
µs
µs
µs
µs
µs
µs
ms
ms
© 1997 Microchip Technology Inc.
Preliminary
DS40150B-page 13
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