SD101AWS View Datasheet(PDF) - Galaxy Semi-Conductor

Part Name

Description

MFG CO.

SD101AWS

Schottky Barrier Diode

Galaxy Semi-Conductor 

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Production specification

Schottky Barrier Diode SD101AWS/SD101BWS/SD101CWS

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol Min.

Reverse Breakdown Voltage SD101AWS

60

SD101BWS V(BR)R 50

SD101CWS

40

Forward voltage

SD101AWS

SD101BWS

SD101CWS

SD101AWS

VF

SD101BWS

SD101CWS

Reverse current

SD101AWS

SD101BWS IRM

SD101CWS

Capacitance between terminals SD101AWS

SD101BWS CT

SD101CWS

Typ.

Reverse Recovery Time

trr

Max. Unit

V

0.41

0.40

0.39

1.00

V

0.95

0.90

0.2 μA

2.0

2.1 pF

2.2

1.0 ns

Conditions

IR=10μA

IR=10μA

IR=10μA

IF=1.0mA

IF=1.0mA

IF=1.0mA

IF=15mA

IF=15mA

IF=15mA

VR=50V

VR=40V

VR=30V

VR=0,f=1MHz

IR=IF=5mA

Irr=0.1*IR,RL=100Ω

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

B024

Rev.A

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