SD101AWS View Datasheet(PDF) - Diode Semiconductor Korea

Part Name

Description

MFG CO.

SD101AWS

Schottky Barrier Diode

Diode Semiconductor Korea 

1 2 3

Diode Semiconductor Korea

Schottky Barrier Diode SD101AWS/SD101BWS/SD101CWS

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Reverse Breakdown Voltage SD101AW

SD101BW

SD101CW

Forward voltage

SD101AW

SD101BW

SD101CW

SD101AW

SD101BW

SD101CW

Reverse current

SD101AW

SD101BW

SD101CW

Capacitance between terminals SD101AW

SD101BW

SD101CW

Symbol

V(BR)R

Min.

60

50

40

VF

IRM

CT

Typ.

Reverse Recovery Time

trr

Max. Unit

V

0.41

0.40

0.39

V

1.00

0.95

0.90

0.2 μA

2.0

2.1 pF

2.2

1.0 ns

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Conditions

IR=10μA

IR=10μA

IR=10μA

IF=1.0mA

IF=1.0mA

IF=1.0mA

IF=15mA

IF=15mA

IF=15mA

VR=50V

VR=40V

VR=30V

VR=0,f=1MHz

IR=IF=5mA

Irr=0.1*IR,RL=100Ω

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