SD103AW View Datasheet(PDF) - Galaxy Semi-Conductor

Part Name

Description

MFG CO.

SD103AW

Schottky Barrier Diode

Galaxy Semi-Conductor 

1 2 3

Production specification

Schottky Barrier Diode

SD103AW/SD103BW/SD103CW

FEATURES

 Low Forward Voltage Drop.

 Guard Ring Construction For Transient

Protection.

 Negligible Reverse Recovery Time.

 Low Reverse Capacitance.

Pb

Lead-free

APPLICATIONS

 Schotty barrier switching.

SOD-123

ORDERING INFORMATION

Type No.

Marking

SD103AW

S4

SD103BW

S5

SD103CW

S6

Package Code

SOD-123

SOD-123

SOD-123

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Parameter

Symbol SD103AW SD103BW SD103CW Unit

Peak Repetitive Peak reverse voltage

VRR

Working Peak

DC Reverse Voltage

VRWM

40

30

20

V

VR

RMS Reverse Voltage

VR(RMS)

28

21

14

V

Forward Continuous Current

IF

350

mA

Repetitive Peak Forward Current @t≤1.0s IFRM

Power Dissipation

Pd

Thermal Resistance Junction to Ambient

RθjA

Storage temperature

Tstg

1.5

400

300

-65 to +125

A

mW

℃/W

℃

A014

Rev.A

www.gmesemi.com

1

Share Link: