SD103AW View Datasheet(PDF) - Galaxy Semi-Conductor

Part Name

Description

MFG CO.

SD103AW

Schottky Barrier Diode

Galaxy Semi-Conductor 

1 2 3

Production specification

Schottky Barrier Diode

SD103AW/SD103BW/SD103CW

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Reverse Breakdown Voltage

SD103AW

SD103BW

SD103CW

Forward voltage

Reverse current

SD103AW

SD103BW

SD103CW

Capacitance between terminals

Reverse Recovery Time

Symbol Min.

40

V(BR)R

30

20

VF

IRM

CT

trr

Typ.

50

10

Max. Unit

V

0.37

0.60

V

5.0 μA

pF

ns

Conditions

IR=10μA

IR=10μA

IR=10μA

IF=20mA

IF=200mA

VR=30V

VR=20V

VR=10V

VR=0,f=1MHz

IR=IF=200mA

Irr=0.1*IR,RL=100Ω

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

A014

Rev.A

www.gmesemi.com

2

Share Link: