SD1224-02 View Datasheet(PDF) - Advanced Power Technology
Part Name
Description
MFG CO.
'SD1224-02' PDF : 4 Pages View PDF
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
RF AND MICROWAVE TRANSISTORS
VHF FM APPLICATIONS
Features
• 175 MHz
• 28 VOLTS
• CLASS C
• COMMON EMITTER
• EFFICIENCY 60% MIN.
• POUT = 40 W MIN.
• GP = 7.6 dB GAIN
SD1224-02
DESCRIPTION:
The SD1224-02 is an epitaxial silicon NPN planar transistor designed
primarily for 28 V FM Class C RF amplifiers utilized in ground station
transmitters. This device utilizes ballasted emitter resistors and
improved metallization systems to achieve optimum load mismatch
capability.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VCES
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Device Current
PDISS
Power Dissipation
TJ
Junction Temperature
TSTG
Storage Temperature
Value
Unit
65
V
35
V
65
V
4.0
V
5.0
A
60
W
+200
°C
-65 to +150
°C
Thermal Data
RTH(j-c) Junction-Case Thermal Resistance
2.9
°C/W
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
Share Link: 
