SD1285 View Datasheet(PDF) - Advanced Semiconductor
Part Name
Description
MFG CO.
'SD1285' PDF : 1 Pages View PDF
1
SD1285
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI SD1285 is Designed for
broadband operation in commercial
and amateur communication
equipment up to 30 MHz.
FEATURES:
• PG = 15 dB min. at 20 W/30 MHz
• IMD = -30 dBc max. at 20 W(PEP)
• Omnigold™ Metalization System
• Emitter Ballasting
MAXIMUM RATINGS
IC
4.5 A
VCBO
36 V
VCEO
18 V
VEBO
4.0 V
PDISS
80 W @ TC = 25 °C
TJ
-65 °C to +200 °C
TSTG
-65 °C to +150 °C
θJC
2.2 °C/W
PACKAGE STYLE .380 4L FLG
.112 x 45°
B
E
A
C
Ø.125 NOM.
FULL R
J
.125
B
E
C
D
E
F
GH I
DIM
MINIMUM
inches / mm
A
.220 / 5.59
B
.785 / 19.94
C
.720 / 18.29
D
.970 / 24.64
E
F
.004 / 0.10
G
.085 / 2.16
H
.160 / 4.06
I
J
.240 / 6.10
MAXIMUM
inches / mm
.230 / 5.84
.730 / 18.54
.980 / 24.89
.385 / 9.78
.006 / 0.15
.105 / 2.67
.180 / 4.57
.280 / 7.11
.255 / 6.48
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BVCBO
IC = 50 mA
BVCEO
IC = 50 mA
BVCES
IC = 50 mA
BVEBO
IE = 5.0 mA
ICES
VCE = 15 V
hFE
VCE = 5.0 V
IC = 1.0 A
Cob
VCB = 12.5 V
f = 1.0 MHz
GP
IMD3
VCC = 12.5 V
ICQ = 25 mA
POUT = 20 Watts (PEP)
f = 30 MHz
MINIMUM TYPICAL MAXIMUM
36
18
36
4.0
5.0
10
200
UNITS
V
V
V
V
mA
---
100
pF
15
18
dB
-30
dBc
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. B
1/1
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