SH8M2 View Datasheet(PDF) - ROHM Semiconductor
Part Name
Description
MFG CO.
'SH8M2' PDF : 4 Pages View PDF
SH8M2
P-ch
Electrical characteristics (Ta=25C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Gate-source leakage
IGSS
−
− ±10 μA VGS= ±20V, VDS=0V
Drain-source breakdown voltage V(BR) DSS −30 −
−
V ID= −1mA, VGS=0V
Zero gate voltage drain current IDSS
−
−
−1 μA VDS= −30V, VGS=0V
Gate threshold voltage
VGS (th) −1.0 − −2.5 V VDS= −10V, ID= −1mA
−
Static drain-source on-state
resistance
RDS (on)∗
−
−
65 90 mΩ ID= −3.5A, VGS= −10V
100 140 mΩ ID= −1.75A, VGS= −4.5V
120 165 mΩ ID= −1.75A, VGS= −4V
Forward transfer admittance Yfs ∗ 1.8 −
−
S VDS= −10V, ID= −1.75A
Input capacitance
Ciss
− 490 −
pF VDS= −10V
Output capacitance
Coss
− 110 −
pF VGS= 0V
Reverse transfer capacitance Crss
−
Turn-on delay time
td (on) ∗ −
Rise time
tr ∗ −
Turn-off delay time
td (off) ∗ −
Fall time
Total gate charge
tf ∗ −
Qg ∗ −
Gate-source charge
Qgs ∗ −
Gate-drain charge
Qgd ∗ −
75 − pF f=1MHz
10
−
ns VDD −15V
15
−
ns ID= −1.75A
35
−
VGS= −10V
ns RL= 8.57Ω
10
−
ns RG= 10Ω
5.5 7.7 nC VDD −15V, VGS= −5V
1.5 − nC ID= −3.5A
2.0 − nC RL= 4.29Ω, RG= 10Ω
∗Pulsed
Body diode characteristics (Source-Drain) (Ta=25C)
Parameter
Forward voltage
Symbol Min. Typ. Max. Unit
VSD ∗
−
− −1.2 V
∗Pulsed
Conditions
IS= −1.6A, VGS=0V
Data Sheet
www.rohm.com
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○c 2009 ROHM Co., Ltd. All rights reserved.
2009.12 - Rev.A
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