SHF-0186K View Datasheet(PDF) - Stanford Microdevices
Part Name
Description
MFG CO.
'SHF-0186K' PDF : 4 Pages View PDF
Preliminary
SHF-0186K DC-3 GHz 0.5 Watt AlGaAs/GaAs HFET
Absolute Maximum Ratings
Operation of this device above any one of these
parameters may cause permanent damage.
Parameter
Symbol
Value
Unit
Bias Conditions should also satisfy the following
expression: IDSVDS (max) < (TJ - TL)/RTH
Drain-to-Source Voltage
Gate-to-Source Voltage
RF Input Power
VDS
+12
V
VGS
-5 to 0
V
PIN
200
mW
Operating Temperature
TOP
-45 to +85
C
Storage Temperature Range
Tstor
-65 to +175
C
Operating Junction Temperature
TJ
+175
C
Typical Performance - Engineering Application Circuits (See AN-020)
Freq
VDS
(MHz) (V)
945
8
1960
8
2140
8
2450
8
IDQ
(mA)
100
100
100
100
P1dB
(dBm)
28.0
28.8
28.7
28.5
OIP3*
(dBm)
41.0
39.5
39.0
39.5
Gain
(dB)
17.9
14.6
14.5
14.0
S11
(dB)
-19.4
-15.8
-12.3
-14.7
S22
(dB)
-9.62
-5.31
-7.02
-5.28
NF
(dB)
3.1
2.5
3.0
2.9
ZSOPT
ZLOPT
Mag Ð Ang Mag Ð Ang
.45 Ð 40 .02 Ð 50
.50 Ð 105 .16 Ð -168
.50 Ð 120 .18 Ð 170
.60 Ð 130 .08 Ð 130
* 15dBm per tone
Data above represents typical performance of the application circuits noted in Application Note AN-020.
Refer to the application note for additional RF data, PCB layouts, and BOMs for each application circuit. The
application note also includes biasing instructions and other key issues to be considered. For the latest
application notes please visit our site at www.stanfordmicro.com or call your local sales representative.
G
ZSOPT
D
S
ZLOPT
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
2
http://www.stanfordmicro.com
EDS-101577 Rev A
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