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Part Name
Description
SLD237VL View Datasheet(PDF) - Sony Semiconductor
Part Name
Description
MFG CO.
SLD237VL
Index-Guided High Power AlGaAs Laser Diode
Sony Semiconductor
'SLD237VL' PDF : 4 Pages
View PDF
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SLD237VL
Optical and Electrical Characteristics
(Tc = 25
°
C)
Item
Symbol
Conditions
Threshold current
Ith
CW
Operating current
Iop
CW, Po = 80mW
Operating voltage
Vop
Wavelength
λ
p
Differential efficiency
η
D
Radiation
angle
Paralell
θ
//
Perpendicular
θ⊥
Astigmatism
As
Positional
accuracy
Angle
Position
∆φ
//
∆φ⊥
∆
X,
∆
Y,
∆
Z
CW, Po = 80mW
CW, Po = 80mW
CW, Po = 80mW
CW, Po = 80mW
CW, Po = 80mW
CW, Po = 80mW
CW, Po = 80mW
CW, Po = 80mW
Tc: Case temperature
Min. Typ. Max.
Unit
25
30
40
mA
90
110 130
mA
—
2.0
2.3
V
779 784 789
nm
0.7
1.0
1.3
mW/mA
7.4
8.3
9.5
deg
15.0 18.0 21.0
deg
–
6
—
0
µm
—
—
±1.6
deg
—
—
±2.5
deg
—
—
±80
µm
–
2
–
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