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SLD301XT View Datasheet(PDF) - Sony Semiconductor

Part Name
Description
MFG CO.
SLD301XT
Sony
Sony Semiconductor Sony
'SLD301XT' PDF : 8 Pages View PDF
1 2 3 4 5 6 7 8
SLD301XT
Electrical and Optical Characteristics
Item
Symbol
Threshold current
Ith
Operating current
Iop
Operating voltage
Vop
Wavelength
λp
Monitor current
Imon
Radiation angle
Perpendicular
Parallel
Position
Positional accuracy
Angle
Differential efficiency
Thermistor resistance
θ⊥
θ//
X, Y
φ⊥
ηD
Rth
(Tth: Thermistor temperature, Tth = 25°C)
Conditions Min.
Typ. Max.
Unit
150
200
mA
PO = 90mW
250
400
mA
PO = 90mW
1.9
3.0
V
PO = 90mW 770
840
nm
PO = 90mW
VR = 10V
0.15
mA
PO = 90mW
28
40
degree
12
17
degree
PO = 90mW
±100
±3
µm
degree
PO = 90mW 0.65
0.9
mW/mA
Tth = 25°C
10
k
Wavelength Selection Classification
Type
Wavelength (nm)
SLD301XT-1
785 ± 15
SLD301XT-2
810 ± 10
SLD301XT-3
830 ± 10
Type
Wavelength (nm)
SLD301XT-21
798 ± 3
SLD301XT-24
807 ± 3
SLD301XT-25
810 ± 3
Handling Precautions
Eye protection against laser beams
The optical output of laser diodes ranges from
several mW to 1W. However the optical power
density of the laser beam at the diode chip
reaches 1mW/cm2. Unlike gas lasers, since
laser diode beams are divergent, uncollimated
laser diode beams are fairly safe at a laser
diode. For observing laser beams, ALWAYS use
safety goggles that block infrared rays. Usage of
IR scopes, IR cameras and fluorescent plates is
also recommended for monitoring laser beams
safely.
Laser diode
Lens
Optical
material
ATC
APC
Optical boad
Optical power output control device
temperature control device
–2–
Safety goggles for
protection from
laser beam
IR fluorescent plate
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