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Part Name
Description
SLD302B View Datasheet(PDF) - Sony Semiconductor
Part Name
Description
MFG CO.
SLD302B
Block-type 200mW High Power Laser Diode
Sony Semiconductor
'SLD302B' PDF : 7 Pages
View PDF
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SLD302B
Electrical and Optical Characteristics
Item
Symbol Conditions
Threshold current
Ith
Operating current
Iop
P
O
= 180mW
Operating voltage
Vop
P
O
= 180mW
Wavelength
Radiation angle
Perpendicular to junction
(F. W. H. M.
∗
)
Parallel to junction
Positional
accuracy
Position
Angle
λ
p
θ⊥
θ
//
∆
X
∆
Y,
∆
Z
∆
φ⊥
P
O
= 180mW
P
O
= 180mW
P
O
= 180mW
Differential efficiency
η
D
∗
F. W. H. M. : Full Width at Half Maximum
P
O
= 180mW
(Tc = 25°C)
Min. Typ. Max. Unit
150 200
mA
400 500
mA
1.9
3.0
V
770
840
nm
28
40
degree
12
17
±300
µm
±100
±3 degree
0.5 0.8
mW/mA
–2–
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