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Part Name
Description
SLD304B View Datasheet(PDF) - Sony Semiconductor
Part Name
Description
MFG CO.
SLD304B
Block-type 1000mW High Power Laser Diode
Sony Semiconductor
'SLD304B' PDF : 7 Pages
View PDF
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SLD304B
Electrical and Optical Characteristics
Item
Symbol Conditions
Threshold current
Ith
Operating current
Iop
P
O
= 900mW
Operating voltage
Vop
P
O
= 900mW
Wavelength
λ
p
Radiation angle
Perpendicular to junction
θ⊥
(F. W. H. M.
∗
)
Parallel to junction
θ
//
Positional
accuracy
Position
Angle
∆
X
∆
Y,
∆
Z
∆
φ⊥
Differential efficiency
η
D
∗
F. W. H. M. : Full Width at Half Maximum
P
O
= 900mW
P
O
= 900mW
P
O
= 900mW
P
O
= 900mW
(Tc = 15°C)
Min. Typ. Max. Unit
450 700
mA
1400 2000 mA
2.1
3.0
V
770
840
nm
28
40
degree
13
17
±300
µm
±100
±3 degree
0.5 0.8
mW/mA
–2–
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