SMBR1640 View Datasheet(PDF) - Micro Electro Magnetical Tech
Part Name
Description
MFG CO.
'SMBR1640' PDF : 1 Pages View PDF
1
Micro-Electro-Magnetical Tech Co.
SCHOTTKY DIE SPECIFICATION
General Description: 40 V 15 A (Super Low Ir)
TYPE: SMBR1640
Single Anode
ELECTRICAL CHARACTERISTICS
DC Blocking Voltage: Ir=1mA(for wafer form)
Ir=0.5mA (for dice form)
Average Rectified Forward Current
Maximum Instantaneous Forward Voltage
@ 15 Ampere, Ta=25°C
@ 20 Ampere, Ta=25°C
Maximum Instantaneous Reverse Voltage
@ VR= 40 Volt, Ta=25°C
SYM
VRRM
IFAV
VF MAX
IR MAX
Spec. Limit
40
15
0.62
0.75
0.09
Die Sort UNIT
42.5
Volt
Amp
0.6
Volt
0.72
0.08
mA
Maximum Junction Capacitance @ 0V, 1MHZ
Cj MAX
pF
MAXIMUM RATINGS
Nonrepetitive Peak Surge Current
IFSM
225
Amp
Operating Junction Temperature
Tj
-65 to +125
°C
Storage Temperature
TSTG
-65 to +125
°C
Specifications apply to die only. Actual performance may degrade when assembled.
MEMT does not guarantee device performance after assembly.
Data sheet information is subjected to change without notice.
DICE OUTLINE DRAWING
A
C
B
Top-side Metal
SiO2 Passivation
D
P+ Guard Ring
Back-side Metal
DIM
ITEM
um2
Mil2
A Die Size
3116 122.67
B Top Metal Pad Size 3016 118.70
C Passivation Seal
3036 119.50
D Thickness (Min)
254 10.00
Thickness (Max)
305 12.00
PS:
(1)Cutting street width is around 80um(3.14mil).
(2)Both of top-side and back-side metals are Ti/Ni/Ag.
Share Link: 
