SML20W65 View Datasheet(PDF) - Semelab - > TT Electronics plc

Part Name

Description

MFG CO.

SML20W65

N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

Semelab - > TT Electronics plc  

1 2

SML20W65

TO–267 Package Outline.

Dimensions in mm (inches)

N–CHANNEL

ENHANCEMENT MODE

HIGH VOLTAGE

POWER MOSFETS

VDSS

ID(cont)

RDS(on)

200V

65A

0.026Ω

D

G

S

• Faster Switching

• Lower Leakage

• TO–267 Hermetic Package

StarMOS is a new generation of high voltage

N–Channel enhancement mode power MOSFETs.

This new technology minimises the JFET effect,

increases packing density and reduces the

on-resistance. StarMOS also achieves faster

switching speeds through optimised gate layout.

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)

VDSS

ID

IDM

Drain – Source Voltage

Continuous Drain Current 3

Pulsed Drain Current 1 3

VGS

Gate – Source Voltage

VGSM

Gate – Source Voltage Transient

PD

Total Power Dissipation @ Tcase = 25°C

Derate Linearly

TJ , TSTG

TL

IAR

EAR

EAS

Operating and Storage Junction Temperature Range

Lead Temperature : 0.063” from Case for 10 Sec.

Avalanche Current 1 3 (Repetitive and Non-Repetitive)

Repetitive Avalanche Energy 1

Single Pulse Avalanche Energy 2

1) Repetitive Rating: Pulse Width limited by maximum junction temperature.

2) Starting TJ = 25°C, L = 1.18mH, RG = 25Ω, Peak IL = 65A

3) Maximum current limited by package.

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk

200

65

260

±30

±40

400

3.2

–55 to 150

300

65

50

2500

V

A

A

V

W

W/°C

°C

A

mJ

6/99

Share Link: