SML50B26F View Datasheet(PDF) - Semelab - > TT Electronics plc
Part Name
Description
MFG CO.
'SML50B26F' PDF : 5 Pages View PDF
SML50B26F
STATIC ELECTRICAL RATINGS (Tcase = 25°C unless otherwise stated)
Characteristic
Test Conditions
BVDSS
Drain – Source Breakdown Voltage
VGS = 0V , ID = 250µA
IDSS
Zero Gate Voltage Drain Current
(VGS = 0V)
VDS = VDSS
VDS = 0.8VDSS , TC = 125°C
IGSS
Gate – Source Leakage Current
VGS = ±30V , VDS = 0V
VGS(TH) Gate Threshold Voltage
VDS = VGS , ID = 1.0mA
ID(ON)
RDS(ON)
On State Drain Current 2
Drain – Source On State Resistance 2
VDS > ID(ON) x RDS(ON) Max
VGS = 10V
VGS = 10V , ID = 0.5 ID [Cont.]
Min.
500
2
26
Typ. Max. Unit
V
25
µA
250
±100 nA
4V
A
0.20 Ω
DYNAMIC CHARACTERISTICS
Characteristic
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Qg
Total Gate Charge3
Qgs
Gate – Source Charge
Qgd
Gate – Drain (“Miller”) Charge
td(on)
Turn–on Delay Time
tr
Rise Time
td(off)
Turn-off Delay Time
tf
Fall Time
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
VGS = 10V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
VGS = 15V
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
RG = 1.8Ω
Min.
Typ.
3700
510
200
150
25
70
12
10
50
8
Max. Unit
4440
715 pF
300
225
37 nC
105
25
20
ns
75
15
SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic
Test Conditions
IS
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current1
(Body Diode)
VSD
Diode Forward Voltage2
VGS = 0V , IS = – ID [Cont.]
IS ≤ ID [cont]
dI / dt = 100A/µs
dv / dt
Peak Diode Recovery
VDD ≤ VDSS
VR = 200V
TJ ≤ 150°C
RG = 2.0Ω
trr
Reverse Recovery Time
IS = – ID [Cont.]
dI / dt = 100A/µs
TJ = 25°C
TJ = 125°C
Qrr
Reverse Recovery Charge
IS = – ID [Cont.]
dl / dt = 100A/µs
TJ = 25°C
TJ = 125°C
Irrm
Peak Recovery Current
IS = – ID [Cont.]
dl / dt = 100A/µs
TJ = 25°C
TJ = 125°C
Min.
Typ.
Max. Unit
26
A
104
1.3 V
5 V/ns
250
ns
500
1.3
µC
4.5
12
A
18
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
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E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
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