SML1001RHN
SML901RHN0
DYNAMIC CHARACTERISTICS
Characteristic
Ciss Input capacitance
Coss Output capacitance
Crss Reverse transfer capacitance
Qg Total Gate Charge3
Qgs Gate – Source Charge
Qgd Gate – Drain (“Miller”) Charge
td(on) Turn–on Delay Time
tr Rise Time
td(off) Turn-off Delay Time
tf Fall Time
Test Conditions.
VGS = 0V
VDS = 25V
f = 1MHz
VGS = 10V
ID = ID [Cont.]
VDD = 0.5 VDSS
VDD = 0.5 VDSS
ID = ID [Cont.]
VGS = 15V
RG = 1.8W
Min.
Typ.
2460
360
105
90
9.3
47
15
16
64
24
Max. Unit
2950
500 pF
160
130
14 nC
70
30
32
ns
95
48
SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic / Test Conditions.
Part Number
IS Continuous Source Current (Body Diode)
ISM Pulsed Source Current1 (Body Diode)
VSD Diode Forward Voltage2
VGS = 0V
IS = – ID [Cont.]
trr Reverse Recovery Time
IS = – ID [Cont.]
dls / dt = 100A/ms
Qrr Reverse Recovery Charge
Min.
Typ.
Max. Unit
10 A
40 A
1.3 V
320 636 1200 ns
2.2 4.5 9 µC
SAFE OPERATING AREA CHARACTERISTICS
Characteristic / Test Conditions / Part Number
SOA1 Safe Operating Area
VDS = 0.4 VDSS , IDS = PD / 0.4 VDSS , t = 1 Sec
SOA2 Safe Operating Area
IDS = IDS [Cont.] , VDS = PD / ID [Cont.] , t = 1 Sec
ILM Inductive Current Clamped
Min.
250
250
40
Typ.
Max. Unit
W
A
THERMAL CHARACTERISTICS (Tcase =25°C unless otherwise stated)
Characteristic / Test Conditions.
RqJC Junction to Case
Junction to Ambient
Min.
Typ.
Max. Unit
0.50 °C/W
40 °C/W
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
µ 2) Pulse Test: Pulse Width < 380 S , Duty Cycle < 2%
3) See MIL–STD–750 Method 3471
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 7/98