SMP75-8 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
'SMP75-8' PDF : 8 Pages View PDF
Table 4: Thermal Resistances
Symbol
Parameter
Rth(j-a) Junction to ambient (with recommended footprint)
Rth(j-l) Junction to leads
SMP75-8
Value
100
20
Unit
°C/W
°C/W
Table 5: Electrical Characteristics (Tamb = 25°C)
Symbol
Parameter
VRM Stand-off voltage
VBR Breakdown voltage
VBO Breakover voltage
IRM Leakage current
IPP Peak pulse current
IBO Breakover current
IH Holding current
VR Continuous reverse voltage
IR Leakage current at VR
C Capacitance
IRM @ VRM
IR @ VR
Types
max.
max.
note1
µA
V
µA
V
SMP75-8
2
6
5
8
Note 1: IR measured at VR guarantee VBR min ≥ VR
Note 2: see functional test circuit 1
Note 3: see test circuit 2
Note 4: see functional holding current test circuit 3
Note 5: VR = 2V bias, VRMS=1V, F=1MHz
Figure 2: Pulse waveform
% I PP
100
Repetitive peak pulse current
tr = rise time (µs)
tp = pulse duration time (µs)
50
0
tr
tp
t
Dynamic
VBO
max.
note 2
V
20
Static
VBO @ IBO
max. max.
note 3
V
mA
15
800
IH
C
typ.
note 4
mA
50
max.
note 5
pF
60
Figure 3: Non repetitive surge peak on-state
current versus overload duration
ITSM(A)
50
45
40
35
30
25
20
15
10
5
0
1E-2
1E-1
t(s)
1E+0
1E+1
F=50Hz
Tj initial = 25°C
1E+2
1E+3
3/8
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