SMP9317 View Datasheet(PDF) - Summit Microelectronics
Part Name
Description
MFG CO.
SMP9317
Summit Microelectronics
'SMP9317' PDF : 6 Pages View PDF
SMP9317
RELIABILITY CHARACTERISTICS (over recommended operating conditions unless otherwise specified)
Symbol Parameter
Min
Max
Unit
Test Method
VZAP
ILTH
TDR
NEND
ESD Susceptibility
Latch-Up
Data Retention
Endurance
2000
100
100
1,000,000
V
mA
Years
Stores
MS-883, TM 3015
JEDEC Standard 17
MS-883, TM 1008
MS-883, TM 1033
2031 PGM T2.0
DC ELECTRICAL CHARACTERISTICS
VDD = +2.7V to +5.5V, VH = VDD, VL = 0V, TA = -40°C to +85°C, Unless otherwise specified
Symbol
Parameter
Conditions
Min
Typ
Max
Units
IDD
Supply Current
during store, note 1
CS = VIL to VIH
W/INC HI
1.0
mA
ISB
Supply Standby Current
CS = VIH
100
µA
IIH
Input Leakage Current
VIN = VDD
10
µA
IIL
Input Leakage Current, note 2
VIN = 0V
-25
µA
VIH
High Level Input Voltage
2
VDD
V
VIL
Low Level Input Voltage
VDD ≥ 4.5V
0
0.8
V
Notes:
2031 PGM T4.1
1. IDD is the supply current drawn while the EEPROM is being updated. IDD does not include the current that flows through the Reference
resistor chain.
2. CS, UP/DN and INC have internal pull-up resistors of approximately 200kΩ. When the input is pulled to ground the resulting output
current will be VDD/200kΩ.
3. TCVOUT is guaranteed but not tested.
2031-04 12/4/98
4
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