SO2907 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
'SO2907' PDF : 4 Pages View PDF
SO2907/SO2907A
THERMAL DATA
Rthj-amb • Thermal Resistance Junction-Ambient
Rth j-SR • Thermal Resistance Junction-Substrat e
• Mounted on a ceramic substrate area = 15 x 15 x 0.7 mm
Max
350
Max
290
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol
P a ram et er
Test Conditions
ICEX Collect or Cut-off
Cu r re nt
VCE = -30 V VBE = -3 V
IBEX Base Cut-off Current VCE = -30 V VBE = -3 V
ICBO
Collector Cut-off
Current (IE = 0)
VCB = -50 V
for SO2907
for SO2907A
V( BR)CEO ∗ Collect or-Emitter
Breakdown Voltage
(IB = 0)
IC = -10 mA
for SO2907
for SO2907A
V( BR)CBO ∗ Collect or-Base
Breakdown Voltage
(IB = 0)
V(BR)EBO
Em it t er -Base
Breakdown Voltage
(IC = 0)
VCE(sat)∗ Collect or-Emitter
Saturation Voltage
IC = -10 µA
IE = -10 µA
IC = -150 mA IB = -15 mA
IC = -500 mA IB = -50 mA
VBE(s at)∗
hFE∗
Co lle ct or- Bas e
Saturation Voltage
DC Current G ain
IC = -150 mA
IC = -500 mA
IC = -0.1 mA
for SO2907
for SO2907A
IC = -1 mA
for SO2907
for SO2907A
IC = -10 mA
for SO2907
for SO2907A
IC = -150 mA
IB = -15 mA
IB = -50 mA
VCE = -10 V
VCE = -10 V
VCE = -10 V
VCE = -10 V
fT
Transit ion F requency IC = -50 mA VCE = -20V f = 100MHz
CCB Collect or Base
Capacitance
IE = 0 VCB = -10 V f = 1 MHz
CEB Emitt er Base
Capacitance
IC = 0 VEB = -2 V f = 1 MHz
td
Delay Time
IC = -150 mA IB1 = -15 mA
tr
Rise Time
ton
Switching On Time
ts
Storage Time
IC = -150 mA IB1 = -IB2 = -15mA
tf
Fall Time
toff
Switching Off Time
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %
Min.
-40
-60
-60
-5
35
75
50
100
75
100
100
200
Typ .
M a x.
-50
-50
-20
-10
-0.4
-1.6
-1.3
-2.6
300
8
30
10
40
45
80
30
100
Unit
nA
nA
nA
nA
V
V
V
V
V
V
V
V
MHz
pF
pF
ns
ns
ns
ns
ns
ns
2/4
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