SO5401 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
'SO5401' PDF : 4 Pages View PDF
SO5401
THERMAL DATA
Rthj-amb • Thermal Resistance Junction-Ambient
Rth j-SR • Thermal Resistance Junction-Substrat e
• Mounted on a ceramic substrate area = 7 x 5 x 0.5 mm
Max
620
Max
400
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol
P a ram et er
Test Conditions
ICBO
Collector Cut-off
Current (IE = 0)
IEBO Collect or Cut-off
Current (IC = 0)
V( BR)CBO ∗ Collect or-Emitter
Breakdown Voltage
(IE = 0)
V( BR)CEO ∗ Collect or-Emitter
Breakdown Voltage
(IB = 0)
V(BR)EBO
Em it t er -Base
Breakdown Voltage
(IC = 0)
VCE(sat)∗ Collect or-Emitter
Saturation Voltage
VCB = -120 V
VEB = -3 V
IC = -100 µA
IC = -1 mA
IC = -10 nA
IC = -10 mA IB = -1 mA
IC = -50 mA IB = -5 mA
VBE(s at)∗ Collect or-Base
Saturation Voltage
IC = -10 mA IB = -1 mA
IC = -50 mA IB = -5 mA
hFE∗ DC Current G ain
IC = -1 mA
IC = -10 mA
IC = -50 mA
VCE = -5 V
VCE = -5 V
VCE = -5 V
fT
Transit ion F requency IC = -10 mA VCE = -10V f = 1 MHz
CCB Collect or Base
Capacitance
IE = 0 VCE = -10 V f = 1 MHz
NF Noise Figure
VCE = -5 V IC = -0.25 mA f = 1KHz
∆f = 200 Hz RG = 1 KΩ
hfe∗ Small Signal Current VCE = -5 V IC = -1 mA f = 1KHz
Gain
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %
Min.
-16 0
-15 0
-5
50
60
50
100
40
Typ .
240
5
M a x.
-50
-50
-0.2
-0.5
-1
-1
400
6
200
Unit
nA
nA
V
V
V
V
V
V
V
MHz
pF
dB
2/4
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