SPF-2000 View Datasheet(PDF) - Sirenza Microdevices => RFMD

Part Name

Description

MFG CO.

SPF-2000

Low Noise High Linearity pHEMT GaAs FET 0.1 - 12 GHz Operation

Sirenza Microdevices => RFMD 

1 2 3

Preliminary

SPF-2000 Low Noise High Linearity FET

Absolute Maximum Ratings

Operation of this device beyond any one of these

parameters may cause permanent damage.

Parameter

Drain Current

MTTF is inversely proportional to the device junction

temperature. For junction temperature and MTTF

considerations the operating conditions should also

satisfy the following experssions:

Forward Gate Current

Reverse Gate Current

Drain-to-Source Voltage

Gate-to-Drain Voltage

PDC - POUT < (TJ - TL) / RTH

where:

PDC = IDS * VDS (W)

POUT = RF Output Power (W)

TJ = Junction Temperature (°C)

TL = Lead Temperature (pin 4) (°C)

RTH = Thermal Resistance (°C/W)

Gate-to-Source Voltage

RF Input Power

Operating Temperature

Storage Temperature Range

Power Dissipation

Channel Temperature

Symbol

IDS

IGSF

IGSR

VDS

VGD

VGS

PIN

TOP

Tstor

PDISS

TJ

Value

IDSS

0.3

0.3

+7

-8

<-5 or >0

100

-40 to +85

-40 to +150

600

+150

Unit

mA

mA

mA

V

V

V

mW

°C

°C

mW

°C

Assembly Instructions:

The recommended die attach is conductive epoxy or AuSn (80/20) solder with limited exposure to

temperatures at or above 300C. The preferred wirebond method is thermo-compression wedge bond

using 0.7 mil gold wire with a maximum stage temperature of 200C. Aluminum wire should not be

used.

Design Data:

Complete design data including S-parameters, noise parameters, and large signal model are

available upon request by contacting applications support at baredie-apps@sirenza.com

303 South Technology Court, Broomfield, CO 80021

Phone: (800) SMI-MMIC

2

http://www.sirenza.com

EDS-103295 Rev A

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