SPF-2086TK View Datasheet(PDF) - Stanford Microdevices
Part Name
Description
MFG CO.
'SPF-2086TK' PDF : 5 Pages View PDF
Preliminary
Product Description
Stanford Microdevices’ SPF-2086TK is a high performance
PHEMT Gallium Arsenide FET utilitzing 0.25 micron long by
300 micron wide Schottky barrier gates.
SPF-2086TK
0.1 GHz - 4 GHz Low Noise PHEMT
GaAs FET
This device is ideally biased at Vds=3V and Id=20mA for lowest
noise performance and battery powered requirements. At 5V
40mA bias it delivers excellent linearity. The SPF-2086TK
provides ideal performance as driver stages in many
commercial, industrial and military LNA applications.
30
24
dB
18
Max Available Gain vs. Frequency
Product Features
• High Gain: 20 dB at 1900 MHz
• +20 dBm Output Power at P1dB
• Low Noise Figure: 0.4 dB NF at
1900 MHz
• Low Current Draw: 20 mA typ. at 3.0V
12
6
0
1
2
3
4
Frequency GHz
Applications
• LNA for Cellular, PCS, CDPD
• Wireless Data, SONET
• Driver Stage for low power
applications
SYMBOL
Bandwidth
PARAMETERS
Note : Bandwidth determined by limited gain
performance
TEST CONDITIONS:
Z0 = 50 OHMS, T = 25°C
P1dB
OIP3
NFOPT
Output Power at 1dB Compression
f = 1 GHz to 4 GHz
Output Third Order Intercept Point
f = 1 GHz to 4 GHz
Optimum Noise Figure
GA
Associated Gain
IDSS
VP
GM
VBGS
VBDS
Drain Saturation Current
Pinch-off Voltage
Transconductance
Gate to Source Breakdown Voltage
Drain to Source Breakdown Voltage
VDS = 5V, ID = 40 mA
VDS = 3V, ID = 20 mA
VDS = 5V, ID = 40 mA
VDS = 3V, ID = 20 mA
f = 1 GHz
f = 2 GHz
f = 4 GHz
VDS=3V, ID=20 mA
f = 1 GHz
f = 2 GHz
f = 4 GHz
VDS = 3V, ID = 20 mA
VDS = 2V, VGS = 0V
VDS = 2V, IDS = 1mA
V = 2V, I = 20mA
DS
DS
UNITS
GHz
dBm
dBm
dBm
dBm
dB
dB
dB
dB
dB
dB
mA
V
mmho
V
V
MIN.
0.1
30
TYP.
20.0
15.0
32
28
0.28
0.44
0.54
23.1
17.8
13.9
85
-1.0
100
-17
-17
MAX.
4.0
140
-8
-8
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
1
http://www.stanfordmicro.com
EDS-101225 Rev. B
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