SRTAG2K-D View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
SRTAG2K-D
STMicroelectronics
'SRTAG2K-D' PDF : 51 Pages View PDF
SRTAG2K-D
9
Maximum rating
Maximum rating
Stressing the device above the rating listed in Table 53 may cause permanent damage to
the device. These are stress ratings only and operation of the device at these or any other
conditions above those indicated in the operating sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect the device
reliability.
Table 53. Absolute maximum ratings
Symbol
Parameter
Min.
Max.
Unit
TA
Ambient operating temperature
TSTG, hSTG,
tSTG
Storage conditions
Sawn wafer on
UV tape
-40
85
°C
15
25
°C
6 (1)
months
kept in its original packing form
TSTG Storage temperature UFDFPN8
–65
Storage temperature Sawn Bumped
15
TSTG
Storage time
Wafer
(kept in its
antistatic bag)
150
°C
25
°C
6
months
TLEAD
Lead temperature
during soldering
UFDFPN8
see note (2)
°C
RFSession
ICC (3)
VMAX_1 (3)
RF Session pad output range
RF supply current AC0 - AC1
RF input voltage
amplitude between
AC0 and AC1, GND
pad left floating
VAC0-VAC1
-0.50
-
-
6.5
V
100
mA
10
V
VMAX_2 (3)
AC voltage between
AC0 and GND, or AC1
and GND
VAC0-GND or
VAC1-GND
-0.5
4.5
V
VESD
Electrostatic discharge
voltage (human body AC0-AC1
model) (4)
-
1000
V
VESD
Electrostatic discharge
voltage (human body RF Session
-
model) (4)
3500
V
1. Counted from ST shipment date.
2. Compliant with JEDEC Std J-STD-020D (for small body, Sn-Pb or Pb assembly), the ST ECOPACK®
7191395 specification, and the European directive on Restrictions on Hazardous Substances (ROHS
directive 2011/65/EU, July 2011).
3. Based on characterization, not tested in production. Maximum absorbed power = 100 mW @ 7.5 A/m
4. AEC-Q100-002 (compliant with JEDEC Std JESD22-A114A, C1 = 100 pF, R1 = 1500 Ω, R2 = 500 Ω)
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