SRTAG2KL View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
'SRTAG2KL' PDF : 51 Pages View PDF
SRTAG2KL
9
Maximum rating
Maximum rating
Stressing the device above the rating listed in Table 55 may cause permanent damage to
the device. These are stress ratings only and operation of the device at these or any other
conditions above those indicated in the operating sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect the device
reliability.
Table 55. Absolute maximum ratings
Symbol
Parameter
Min.
Max.
Unit
TA
Ambient operating temperature
TSTG, hSTG,
tSTG
Storage conditions
Sawn wafer on
UV tape
TSTG
ICC (2)
VMAX_1 (2)
Storage temperature
Storage time
Sawn Bumped
Wafer
(kept in its
antistatic bag)
RF supply current AC0 - AC1
RF input voltage
amplitude between
AC0 and AC1, VSS
pad left floating
VAC0-VAC1
(Peak to Peak)
VESD
Electrostatic discharge
voltage (human body AC0-AC1
model) (3)
-40
85
°C
15
25
°C
6 (1)
months
kept in its original packing form
15
25
°C
6
months
-
100
mA
-
10
V
-
1000
V
1. Counted from ST shipment date.
2. Based on characterization, not tested in production. Maximum absorbed power = 100 mW @ 7.5 A/m
3. AEC-Q100-002 (compliant with JEDEC Std JESD22-A114A, C1 = 100 pF, R1 = 1500 Ω, R2 = 500 Ω)
DocID026583 Rev 2
47/51
Share Link: 
