SSL4101T View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
MFG CO.
'SSL4101T' PDF : 29 Pages View PDF
NXP Semiconductors
SSL4101T
GreenChip III+ SMPS control IC
Table 5. Characteristics …continued
Tamb = 25 °C; VCC = 20 V; all voltages are measured with respect to ground (pin 2); currents are positive when flowing into
the IC; unless otherwise specified.
Symbol
Parameter
Conditions
Min Typ Max Unit
Valley switching PFC (pin PFCAUX)
(ΔV/Δt)vrec(PFC)
PFC valley recognition voltage
change with time
-
-
1.7 V/μs
tvrec(PFC)
PFC valley recognition time
VPFCAUX = 1 V peak-to-peak
demagnetization to ΔV/Δt = 0
[2] -
-
300 ns
[3] -
-
50 ns
tto(vrec)PFC
PFC valley recognition time-out
time
3
4
6
μs
Demagnetization management PFC (pin PFCAUX)
Vth(comp)PFCAUX
comparator threshold voltage
on pin PFCAUX
−150 −100 −50 mV
tto(demag)PFC
PFC demagnetization time-out
time
40 50 60 μs
Iprot(PFCAUX)
protection current on pin
PFCAUX
VPFCAUX = 50 mV
−75 -
−5 nA
Driver (pin PFCDRIVER)
Isrc(PFCDRIVER)
source current on pin
PFCDRIVER
VPFCDRIVER = 2 V
-
−0.5 -
A
Isink(PFCDRIVER)
VO(PFCDRIVER)max
sink current on pin
PFCDRIVER
maximum output voltage on pin
PFCDRIVER
VPFCDRIVER = 2 V
VPFCDRIVER = 10 V
-
0.7 -
A
-
1.2 -
A
-
11 12 V
Overvoltage protection flyback (pin FBAUX)
Iovp(FBAUX)
overvoltage protection current
on pin FBAUX
279 300 321 μA
Ncy(ovp)
number of overvoltage
protection cycles
6
8
12
Demagnetization management flyback (pin FBAUX)
Vth(comp)FBAUX
comparator threshold voltage
on pin FBAUX
60 80 110 mV
Iprot(FBAUX)
protection current on pin
FBAUX
VFBAUX = 50 mV
−50 -
−5 nA
Vclamp(FBAUX)
tsup(xfmr_ring)
clamp voltage on pin FBAUX
transformer ringing
suppression time
IFBAUX = −500 μA
IFBAUX = 500 μA
−1.0 −0.8 −0.6 V
0.5 0.7 0.9 V
1.5 2
2.5 μs
Pulse width modulator flyback
ton(fb)min
ton(fb)max
minimum flyback on-time
maximum flyback on-time
-
tleb
-
ns
32 40 48 μs
SSL4101T
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 21 April 2011
© NXP B.V. 2011. All rights reserved.
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