SSRP105B1 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
'SSRP105B1' PDF : 6 Pages View PDF
SSRP105B1
ELECTRICAL CHARACTERISTICS between TIP and GND, RING and GND (Tamb=25°C)
Symbol
VBO
Parameter
Test conditions (note 1)
Breakover voltage Positive voltage
(note 2)
. 50Hz
. 10/700µs
Min. Typ. Max. Unit
165 V
165
Negative voltage . 50Hz
225
. 10/700µs
225
IH
Holding current Positive polarity
Negative polarity
100
mA
150
IR
Leakage current VR = +105 V
(note 3)
VR = - 180 V
10 µA
10
C
Capacitance
F = 1MHz, VRMS = 1V, VR(T/G) = -5V
F = 1MHz, VRMS = 1V, VR(T/G) = -50V
30
pF
16
ELECTRICAL CHARACTERISTICS between TIP and RING (Tamb=25°C)
Symbol
Parameter
IR
Leakage current (note 3)
Test conditions
VR = +180 V
VR = - 180 V
Min Max Unit
10
µA
10
Note 1:
Note 2:
Note 3:
Positive voltage means between T and G, or between R and G.
Negative voltage means between G and T, or between G and R.
See test circuit for VBO parameters
IR measured at VR guarantees VBR > VR
Fig. 4: Relative variation of holding current versus
junction temperature.
IH(Tamb)/IH(Tamb=25°C)
1.2
1
0.8
0.6
0.4
0.2
Fig. 5: Non-repetitive peak on-state current versus
overload duration (Tj initial = +25°C)..
ITSM(A)
25
20
15
10
5
F= 50Hz
0
0
20
40
60
Tamb(°C)
0
0.01
0.1
80
1
10
tp(s)
100
1000
Fig. 6: Capacitance versus
voltages (typical values).
C(pF)
100
applied reverse
Tj= 25°C
F= 1MHz
Vrms= 1V
TIPor RING(+) / GND(-)
10
GND(+) / TIP or RING(-)
1
1
10
100
1000
VR(V)
4/6
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