ST10F276 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
'ST10F276' PDF : 229 Pages View PDF
ST10F276
Internal Flash memory
4.4.5
4.4.6
4.4.7
Table 10. Banks (BxS) and sectors (BxFy) status bits meaning
ERR SUSP
BxS = 1 meaning
BxFy = 1 meaning
1
- Erase error in bank x
0
1 Erase suspended in bank x
0
0 Don’t care
Erase error in sector y of bank x
Erase suspended in sector y of bank x
Don’t care
Flash data register 0 low
The Flash address registers (FARH/L) and the Flash data registers (FDR1H/L-FDR0H/L)
are used during the program operations to store Flash Address in which to program and
data to program.
FDR0L (0x0E 0008)
FCR
Reset value: FFFFh
15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0
DIN15 DIN14 DIN13 DIN12 DIN11 DIN10 DIN9 DIN8 DIN7 DIN6 DIN5 DIN4 DIN3 DIN2 DIN1 DIN0
RW RW RW RW RW RW RW RW RW RW RW RW RW RW RW RW
Table 11. Flash data register 0 low
Bit
Function
DIN(15:0)
Data input 15:0
These bits must be written with the data to program the Flash with the following
operations: word program (32-bit), double word program (64-bit) and set protection.
Flash data register 0 high
FDR0H (0x0E 000A)
FCR
Reset value: FFFFh
15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0
DIN31 DIN30 DIN29 DIN28 DIN27 DIN26 DIN25 DIN24 DIN23 DIN22 DIN21 DIN20 DIN19 DIN18 DIN17 DIN16
RW RW RW RW RW RW RW RW RW RW RW RW RW RW RW RW
Table 12. Flash data register 0 high
Bit
Function
Data input 31:16
DIN(31:16) These bits must be written with the data to program the Flash with the following
operations: word program (32-bit), double word program (64-bit) and set protection.
Flash data register 1 low
FDR1L (0x0E 000C)
FCR
Reset value: FFFFh
15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0
DIN15 DIN14 DIN13 DIN12 DIN11 DIN10 DIN9 DIN8 DIN7 DIN6 DIN5 DIN4 DIN3 DIN2 DIN1 DIN0
RW RW RW RW RW RW RW RW RW RW RW RW RW RW RW RW
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