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ST13003D-K View Datasheet(PDF) - STMicroelectronics

Part Name
Description
MFG CO.
ST13003D-K
ST-Microelectronics
STMicroelectronics ST-Microelectronics
'ST13003D-K' PDF : 8 Pages View PDF
1 2 3 4 5 6 7 8
ST13003D-K
High voltage fast-switching NPN power transistor
Features
High voltage capability
Low spread of dynamic parameters
Minimum lot-to-lot spread for reliable operation
Very high switching speed
Integrated antiparallel collector-emitter diode
Applications
Electronic ballast for fluorescent lighting
Description
The device is manufactured using high voltage
multi-epitaxial planar technology for high
switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The device is designed for use in lighting
applications.
SOT-32
1
2
3
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
Marking
ST13003D-K
13003D
Package
SOT-32
Packaging
cardboard box
November 2007
Rev 1
1/8
www.st.com
8
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