STB11NM60 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
STB11NM60
STMicroelectronics
'STB11NM60' PDF : 12 Pages View PDF
STP11NM60 / STP11NM60FP / STB11NM60 / STB11NM60-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
Test Conditions
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 300V, ID = 5.5A
RG = 4.7Ω VGS = 10V
(see test circuit, Figure 3)
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDD = 400V, ID = 11A,
VGS = 10V
Qgd
Gate-Drain Charge
SWITCHING OFF
Symbol
Parameter
tr(Voff)
Off-voltage Rise Time
tf
Fall Time
tc
Cross-over Time
Test Conditions
VDD = 400V, ID = 11A,
RG = 4.7Ω, VGS = 10V
(see test circuit, Figure 5)
Min. Typ. Max. Unit
20
ns
20
ns
30
nC
10
nC
15
nC
Min.
Typ.
6
11
19
Max.
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min. Typ. Max.
ISD
Source-drain Current
11
ISDM (2) Source-drain Current (pulsed)
44
VSD (1) Forward On Voltage
ISD = 11A, VGS = 0
1.5
trr
Reverse Recovery Time
ISD = 11A, di/dt = 100A/µs,
Qrr
Reverse Recovery Charge
VDD = 100 V, Tj = 25°C
Irrm
Reverse Recovery Current (see test circuit, Figure 5)
390
3.8
19.5
trr
Reverse Recovery Time
ISD = 11A, di/dt = 100A/µs,
570
Qrr
Reverse Recovery Charge
VDD = 100 V, Tj = 150°C
5.7
Irrm
Reverse Recovery Current (see test circuit, Figure 5)
20
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Safe Operating Area for TO-220/D2PAK/I2PAK
Safe Operating Area for TO-220FP
Unit
A
A
V
ns
µC
A
ns
µC
A
3/12
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