STB22NS25Z View Datasheet(PDF) - STMicroelectronics

Part Name

Description

MFG CO.

STB22NS25Z

N-channel 250V - 0.13Ω - 22A - TO-220 / D2PAK Zener-protected MESH OVERLAY™ Power MOSFET

STMicroelectronics 

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Electrical characteristics

2

Electrical characteristics

STB22NS25Z - STP22NS25Z

(Tcase =25°C unless otherwise specified)

Table 4. On /off states

Symbol

Parameter

Drain-source

V(BR)DSS breakdown voltage

IDSS

IGSS

VGS(th)

RDS(on)

Zero gate voltage

drain current (VGS = 0)

Gate-body leakage

current (VDS = 0)

Gate threshold voltage

Static drain-source on

resistance

Test conditions

ID = 250µA, VGS = 0

VDS = Max rating

VDS = Max rating, TC = 125°C

VGS = ±18V

VDS = VGS, ID = 250µA

VGS = 10V, ID = 11A

Min.

250

2

Typ.

3

0.13

Max. Unit

V

10 µA

100 µA

±10 µA

4V

0.15 Ω

Table 5. Dynamic

Symbol

Parameter

Test conditions

gfs (1)

Ciss

Coss

Crss

Forward

transconductance

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS > ID(on) x RDS(on)max,

ID = 11A

VDS = 25V, f = 1MHz, VGS = 0

Qg

Total gate charge

Qgs Gate-source charge

Qgd Gate-drain charge

VDD = 200V, ID = 20A,

VGS = 10V

(see Figure 13)

1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

Min.

Typ. Max. Unit

22

S

2400

pF

340

pF

120

pF

108 151 nC

11

nC

40

nC

4/14

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