STB5NC50 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
'STB5NC50' PDF : 12 Pages View PDF
STP5NC50 - STP5NC50FP - STB5NC50 - STB5NC50-1
ELECTRICAL CHARACTERISTICS
(CONTINUED)
SWITCHING ON
Symbol
Parameter
td(on)
tr
Turn-on Delay Time
Rise Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
SWITCHING OFF
Symbol
Parameter
tr(Voff)
Off-voltage Rise Time
tf
Fall Time
tc
Cross-over Time
Test Conditions
VDD = 250V, ID = 2.5A
RG = 4.7Ω VGS = 10V
(see test circuit, Figure 3)
VDD = 400V, ID = 5.5A,
VGS = 10V
Test Conditions
VDD = 400V, ID = 5.5A,
RG = 4.7Ω, VGS = 10V
(see test circuit, Figure 5)
Min.
Typ.
14
15
17.5
3
9
Max.
24.5
Unit
ns
ns
nC
nC
nC
Min.
Typ.
12
14
20
Max.
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
Source-drain Current
ISDM (2) Source-drain Current (pulsed)
VSD (1) Forward On Voltage
ISD = 5.5A, VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 5.5A, di/dt = 100A/µs,
VDD = 100V, Tj = 150°C
(see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Min.
Typ.
360
1.6
9
Max.
5.5
22
1.6
Unit
A
A
V
ns
µC
A
Safe Operating Area for TO-220/D2PAK/I2PAK Safe Operating Area for TO-220FP
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