STB60NH02L View Datasheet(PDF) - STMicroelectronics

Part Name

Description

MFG CO.

STB60NH02L

N-CHANNEL 24V - 0.0085 Ω - 60A D²PAK STripFET™ III POWER MOSFET

STMicroelectronics 

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STB60NH02L

N-CHANNEL 24V - 0.0085 Ω - 60A D²PAK

STripFET™ III POWER MOSFET

TYPE

VDSS

RDS(on)

ID

STB60NH02L

24 V < 0.0105 Ω 60 A

■ TYPICAL RDS(on) = 0.0085 Ω @ 10 V

■ TYPICAL RDS(on) = 0.012 Ω @ 5 V

■ RDS(ON) * Qg INDUSTRY’s BENCHMARK

■ CONDUCTION LOSSES REDUCED

■ SWITCHING LOSSES REDUCED

■ LOW THRESHOLD DEVICE

■ SURFACE-MOUNTING D2PAK (TO-263)

POWER PACKAGE IN TUBE (NO SUFFIX) OR

IN TAPE & REEL (SUFFIX “T4”)

DESCRIPTION

The STB60NH02L utilizes the latest advanced design

rules of ST’s proprietary STripFET™ technology. This is

suitable fot the most demanding DC-DC converter

application where high efficiency is to be achieved.

APPLICATIONS

■ SPECIFICALLY DESIGNED AND OPTIMISED

FOR HIGH EFFICIENCY DC/DC CONVERTES

3

1

D2PAK

TO-263

(Suffix “T4”)

INTERNAL SCHEMATIC DIAGRAM

Ordering Information

SALES TYPE

STB60NH02LT4

MARKING

B60NH02L

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Vspike(1)

VDS

VDGR

VGS

Drain-source Voltage Rating

Drain-source Voltage (VGS = 0)

Drain-gate Voltage (RGS = 20 kΩ)

Gate- source Voltage

ID

Drain Current (continuous) at TC = 25°C

ID

Drain Current (continuous) at TC = 100°C

IDM(2)

Drain Current (pulsed)

Ptot

Total Dissipation at TC = 25°C

Derating Factor

EAS (3)

Tstg

Single Pulse Avalanche Energy

Storage Temperature

Tj

Max. Operating Junction Temperature

May 2004

PACKAGE

TO-263

Value

30

24

24

± 20

60

43

240

70

0.47

280

-55 to 175

PACKAGING

TAPE & REEL

Unit

V

V

V

V

A

A

A

W

W/°C

mJ

°C

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