STB90NF03L-1 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

MFG CO.

STB90NF03L-1

N-CHANNEL 30V - 0.0056Ω - 90A TO-220/I2PAK LOW GATE CHARGE STripFET™ POWER MOSFET

STMicroelectronics 

1 2 3 4 5 6 7 8 9

Electrical characteristics

2

Electrical characteristics

STP90NF03L - STB90NF03L-1

(TCASE=25°C unless otherwise specified)

Table 3. On/off states

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 250 µA, VGS= 0

30

V

Zero gate voltage drain

IDSS current (VGS = 0)

VDS = Max rating,

VDS = Max rating @125°C

1

µA

10 µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ±20V

± 100 nA

VGS(th) Gate threshold voltage

VDS= VGS, ID = 250µA

1

2.5

V

RDS(on)

Static drain-source on

resistance

VGS= 10V, ID= 45A

VGS= 5V, ID= 45A

0.0056 0.0065 Ω

0.007 0.012 Ω

Table 4. Dynamic

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

gfs (1)

Ciss

Coss

Crss

Forward transconductance

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS > ID(on) x RDS(on)max,

ID = 45A

VDS =25V, f=1 MHz, VGS=0

Qg Total gate charge

Qgs Gate-source charge

Qgd Gate-drain charge

VDD=24V, ID = 90A

VGS =5V

1. Pulsed: pulse duration=300µs, duty cycle 1.5%

40

S

2700

pF

860

pF

170

pF

35 47 nC

10

nC

18

nC

Table 5. Switching times

Symbol

Parameter

td(on)

tr

Turn-on delay time

rise time

td(off)

tf

Turn-off-delay time

fall time

Test conditions

VDD = 15V, ID = 45A,

RG = 4.7Ω, VGS = 4.5V

(see Figure 12)

VDD = 15V, ID = 45A,

RG = 4.7Ω, VGS = 4.5V

(see Figure 12)

Min. Typ. Max. Unit

30

ns

200

ns

ns

50

ns

105

4/13

Share Link: