STB90NF03L-1 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

MFG CO.

STB90NF03L-1

N-CHANNEL 30V - 0.0056Ω - 90A TO-220/I2PAK LOW GATE CHARGE STripFET™ POWER MOSFET

STMicroelectronics 

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STP90NF03L - STB90NF03L-1

Electrical characteristics

Table 6. Source drain diode

Symbol

Parameter

Test conditions

ISD

ISDM(1)

VSD(2)

Source-drain current

Source-drain current (pulsed)

Forward on voltage

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD=90A, VGS=0

ISD=90A,

di/dt = 100A/µs,

VDD=15V, Tj=150°C

(see Figure 14)

1. Pulse width limited by safe operating area

2. Pulsed: pulse duration=300µs, duty cycle 1.5%

Min Typ. Max Unit

90 A

360 A

1.3 V

80

ns

90

µC

2.5

A

5/13

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