STC03DE170HV View Datasheet(PDF) - STMicroelectronics

Part Name

Description

MFG CO.

STC03DE170HV

Hybrid emitter switched bipolar transistor ESBT® 1700V - 3A - 0.55 Ω

STMicroelectronics 

1 2 3 4 5 6 7 8 9 10

Electrical characteristics

STC03DE170HV

Table 4. Electrical characteristics

Symbol

Parameter

Test Conditions

VCS(dyn)

VCSW

Collector-source

dynamic voltage

(1µs)

VCC =VClamp =400V

VGS =10V

IC =1.5A

IB = 0.1A

RG =47Ω

tpeak =500ns

IBpeak =3A

Maximum collector-

source voltage switched RG =47Ω

without snubber

hFE =5

IC = 4A

Min. Typ. Max. Unit

9.5

V

1700

V

Note (1) Pulsed duration = 300 µs, duty cycle ≤1.5%

2.1

Electrical characteristics (curves)

Figure 2. Output characteristics

Figure 3. Dynamic collector-source

saturation voltage

Figure 4. Reverse biased safe

operating area

Figure 5. Gate threshold voltage vs

temperature

4/9

Share Link: