STD2NK90Z View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
STD2NK90Z
STMicroelectronics
'STD2NK90Z' PDF : 13 Pages View PDF
Electrical characteristics
STP2NK90Z - STD2NK90Z - STD2NK90Z-1
Table 8. Source drain diode
Symbol
Parameter
Test condictions
Min Typ. Max Unit
ISD Source-drain current
ISDM(1) Source-drain current (pulsed)
VSD(2) Forward on voltage
ISD = 2.1 A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 2 A, di/dt = 100 A/µs
VDD = 50V
(see Figure 20)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 2 A, di/dt = 100 A/µs
VDD = 50V, Tj = 150°C
(see Figure 20)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
2.1 A
8.4 A
1.6 V
415
ns
1.5
µC
7.2
A
515
ns
1.9
µC
7.5
A
6/18
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