STD4N25-1 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

MFG CO.

STD4N25-1

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

STMicroelectronics 

1 2 3 4 5 6 7 8 9 10

STD4N25

Switching Safe Operating Area

Accidental Overload Area

Source-drain Diode Forward Characteristics

Fig. 1: Unclamped Inductive Load Test Circuits

Fig. 2: Unclamped Inductive Waveforms

6/10

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