STD90N02L View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
'STD90N02L' PDF : 17 Pages View PDF
Electrical characteristics
2
Electrical characteristics
STD90N02L - STD90N02L-1
(Tcase =25°C unless otherwise specified)
Table 4. On /off states
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source breakdown
voltage
ID = 25mA, VGS= 0
IDSS
Zero gate voltage drain VDS = 20V,
current (VGS = 0)
VDS = 20V,Tc = 125°C
IGSS
Gate body leakage
current (VDS = 0)
VGS = ±20V
VGS(th) Gate threshold voltage VDS= VGS, ID = 250µA
RDS(on)
Static drain-source on
resistance
VGS= 10V, ID= 30A
VGS= 5V, ID= 15A
Min. Typ. Max. Unit
25
V
1 µA
10 µA
±100 nA
1
1.8
V
0.0052 0.006 Ω
0.007 0.011 Ω
Table 5.
Symbol
Dynamic
Parameter
Test conditions
gfs (1)
Forward
transconductance
VDS =10V, ID = 18A
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =16V, f=1MHz, VGS=0
Qg
Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD=10V, ID = 60A
VGS =5V
(see Figure 17)
f=1MHz Gate DC Bias =0
RG Gate input resistance test signal level =20mV
open drain
QOSS(2) Output charge
VDS =10V, VGS =0V
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
2. Qoss.= Coss * D Vin, Coss = Cgd + Cgd. (see Buck converter)
Min. Typ. Max. Unit
27
S
2050
pF
545
pF
70
pF
17
22 nC
7.7
nC
3.5
nC
0.5 1.5
3
Ω
14
nC
4/17
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