STF18N60M2 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
STF18N60M2
STMicroelectronics
'STF18N60M2' PDF : 12 Pages View PDF
STF18N60M2
Electrical characteristics
2
Electrical characteristics
(TC = 25 °C unless otherwise specified).
Table 4. On /off states
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source breakdown
voltage
ID = 1 mA, VGS = 0 V
IDSS
IGSS
Zero gate voltage
drain current
Gate-body leakage
current
VGS = 0 V, VDS = 600 V
VGS = 0 V, VDS = 600 V,
TC = 125 °C (1)
VDS = 0 V, VGS = ± 25 V
VGS(th)
RDS(on)
Gate threshold voltage
Static drain-source
on-resistance
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 6.5 A
1. Defined by design, not subject to production test.
Min.
600
2
Typ.
Max.
1
100
3
0.255
±10
4
0.280
Unit
V
µA
µA
µA
V
Ω
Table 5. Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer capacitance
VDS = 100 V, f = 1 MHz,
VGS = 0 V
-
791
-
pF
-
40
-
pF
-
1.3
-
pF
Coss eq. (1) Equivalent output capacitance VDS = 0 to 480 V, VGS = 0 V
-
164.5
-
pF
RG
Intrinsic gate resistance
f = 1 MHz, ID = 0 A
-
5.6
-
Ω
Qg
Total gate charge
VDD = 480 V, ID = 13 A,
-
21.5
-
nC
Qgs
Gate-source charge
Qgd
Gate-drain charge
VGS = 0 to 10 V (see
-
3.2
-
nC
Figure 14. Test circuit for gate
charge behavior)
-
11.3
-
nC
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0
to 80% VDSS.
Symbol
td(on)
tr
td(off)
tf
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Table 6. Switching times
Test conditions
Min.
Typ.
Max.
Unit
VDD = 300 V, ID = 6.5 A,
-
12
-
ns
RG = 4.7 Ω, VGS = 10 V
-
9
-
ns
(see Figure 13. Test circuit for
-
47
-
ns
resistive load switching times
and Figure 18. Switching time
waveform)
-
10.6
-
ns
DS9710 - Rev 4
page 3/12
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