STF2NK60Z View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
STF2NK60Z
STMicroelectronics
'STF2NK60Z' PDF : 16 Pages View PDF
STQ2NK60ZR-AP - STP2NK60Z - STF2NK60Z - STD2NK60Z-1
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 7: On/Off
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
V(BR)DSS Drain-source
ID = 1mA, VGS = 0
600
V
Breakdown Voltage
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
µA
50
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20V
±10
µA
VGS(th) Gate Threshold Voltage
VDS = VGS, ID = 50 µA
3
3.75
4.5
V
RDS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 0.7 A
7.2
8
Ω
Table 8: Dynamic
Symbol
Parameter
Test Conditions
gfs (1)
Forward Transconductance
VDS = 15 V, ID= 0.7 A
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
VDS = 25V, f = 1 MHz, VGS = 0
Reverse Transfer Capacitance
Coss eq. (3) Equivalent Output Capacitance VGS = 0V, VDS = 0V to 480V
td(on)
tr
td(off)
tr
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
VDD = 300 V, ID = 0.65 A,
RG= 4.7 Ω, VGS = 10 V
(Resistive Load see, Figure
22)
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 480V, ID = 1.5 A,
VGS = 10V
(see, Figure 24)
Min.
Typ.
1
170
27
5
30
8
30
22
55
7.7
1.7
4
Max.
10
Unit
S
pF
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Table 9: Source Drain Diode
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
ISD
ISDM (2)
Source-drain Current
Source-drain Current (pulsed)
1.5
A
6
A
VSD (1) Forward On Voltage
ISD = 1.5 A, VGS = 0
1.6
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 1.3 A, di/dt = 100 A/µs
VDD = 25V, Tj = 25°C
(see test circuit, Figure 23)
250
ns
550
µC
4.4
A
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 1.3 A, di/dt = 100 A/µs
VDD = 25V, Tj = 150°C
(see test circuit, Figure 23)
300
ns
690
µC
4.6
A
(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(2) Pulse width limited by safe operating area.
(3) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS
3/16
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