STGB3NB60KD View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
STGB3NB60KD
STMicroelectronics
'STGB3NB60KD' PDF : 12 Pages View PDF
STGP3NB60KD-STGP3NB60KDFP-STGB3NB60KD
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VCES
VECR
VGE
IC
IC
ICM ( )
PTOT
Collector-Emitter Voltage (VGS = 0)
Emitter-Collector Voltage
Gate-Emitter Voltage
Collector Current (continuous) at TC = 25°C (#)
Collector Current (continuous) at TC = 100°C (#)
Collector Current (pulsed)
Total Dissipation at TC = 25°C
Derating Factor
VISO
Tstg
Tj
Insulation Withstand Voltage A.C.
Storage Temperature
Max. Operating Junction Temperature
( ) Pulse width limited by safe operating area
Value
TO-220
D2PAK
TO-220FP
600
20
±20
10
6
24
50
25
0.4
0.2
--
2500
– 55 to 150
150
Unit
V
V
V
A
A
A
W
W/°C
V
°C
°C
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max
Rthj-amb Thermal Resistance Junction-ambient Max
TO-220
D2PAK
2.5
62.5
TO-220FP
5
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
MAIN PARAMETERS
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
VBR(CES) Collector-Emitter Breakdown IC = 250 µA, VGE = 0
600
V
Voltage
ICES
Collector cut-off
(VGE = 0)
VCE = Max Rating, TC = 25 °C
VCE = Max Rating, TC = 125 °C
50
µA
500
µA
IGES
Gate-Emitter Leakage
Current (VCE = 0)
VGE = ±20V , VCE = 0
±100
nA
VGE(th) Gate Threshold Voltage
VCE = VGE, IC = 250µA
5
7
V
VCE(sat)
Collector-Emitter Saturation
Voltage
VGE = 15V, IC = 3 A
VGE = 15V, IC = 3 A, Tj =125°C
2.3
2.8
V
1.9
V
2/12
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