STGB7NB60HD View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
'STGB7NB60HD' PDF : 8 Pages View PDF
®
STGB7NB60HD
N-CHANNEL 7A - 600V DPAK
PowerMESH™ IGBT
T YPE
V CES
VCE(sat)
IC
STGB7NB60HD 600 V < 2.8 V
7A
s HIGH INPUT IMPEDANCE
(VOLTAGE DRIVEN)
s LOW ON-VOLTAGE DROP (Vcesat)
s LOW GATE CHARGE
s HIGH CURRENT CAPABILITY
s VERY HIGH FREQUENCY OPERATION
s OFF LOSSES INCLUDE TAIL CURRENT
s CO-PACKAGED WITH TURBOSWITCH™
ANTIPARALLEL DIODE
s SURFACE-MOUNTING D2PAK (TO-263)
POWER PACKAGE IN TAPE & REEL
(SUFFIX ”T4”)
DESCRIPTION
Using the latest high voltage technology based
on a patented strip layout, STMicroelectronics
has designed an advanced family of IGBTs, the
PowerMESH™ IGBTs, with outstanding
perfomances. The suffix ”H” identifies a family
optimized to achieve very low switching times for
high frequency applications (<120kHz).
APPLICATIONS
s HIGH FREQUENCY MOTOR CONTROLS
s SMPS AND PFC IN BOTH HARD SWITCH
AND RESONANT TOPOLOGIES
ABSOLUTE MAXIMUM RATINGS
Symb ol
Parameter
VCES
VGE
IC
IC
Collector-Emitter Volt age (VGS = 0)
G ate-Emitter Voltage
Collector Current (continuous) at Tc = 25 oC
Collector Current (continuous) at Tc = 100 oC
ICM(•) Collector Current (pulsed)
Ptot T otal Dissipation at Tc = 25 oC
Derating Factor
Ts tg Storage T emperature
Tj
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
3
1
D2PAK
TO-263
(Suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
Value
600
± 20
14
7
56
80
0. 64
-65 to 150
150
Un it
V
V
A
A
A
W
W /o C
oC
oC
June 1999
1/8
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