STGP7NB60HD View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
'STGP7NB60HD' PDF : 9 Pages View PDF
STGP7NB60HD/FP
THERMAL DATA
Rthj-case
Rthj-amb
Rthc-sink
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Max
Max
Typ
TO-220 TO-220FP
1.56
3.57
62.5
0.5
oC/W
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tj = 25 oC unless otherwise specified)
OFF
Symbol
Parameter
VBR(CES) Collector-Emitter
Breakdown Voltage
ICES
Collector cut-off
(VGE = 0)
IGES
Gate-Emitter Leakage
Current (VCE = 0)
Test Conditions
IC = 250 µA VGE = 0
VCE = Max Rating
VCE = Max Rating
VGE = ± 20 V
Tj = 25 oC
Tj = 125 oC
VCE = 0
Min.
600
Typ. Max. Unit
V
250 µA
2000 µA
± 100 nA
ON (∗)
Symbol
VGE(th)
VCE(SAT)
Parameter
Gate Threshold
Voltage
Collector-Emitter
Saturation Voltage
Test Conditions
VCE = VGE IC = 250 µA
Min. Typ. Max. Unit
3
5
V
VGE = 15 V IC = 7 A
VGE = 15 V IC = 7 A Tj = 125 oC
2.3 2.8
V
1.9
V
DYNAMIC
Symbol
gfs
Cies
Coes
Cres
QG
QGE
QGC
ICL
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Latching Current
Test Conditions
VCE =25 V
IC = 7 A
VCE = 25 V f = 1 MHz VGE = 0
VCE = 480 V IC = 7 A VGE = 15 V
Vclamp = 480 V RG=10Ω
Tj = 150 oC
Min.
3.5
390
45
10
28
Typ.
5
560
68
15
42
7.9
17.6
Max.
730
90
20
55
Unit
S
pF
pF
pF
nC
nC
nC
A
SWITCHING ON
Symbol
td(on)
tr
(di/dt)on
Eon(r)
Parameter
Delay Time
Rise Time
Turn-on Current Slope
Turn-on
Switching Losses
Test Conditions
VCC = 480 V
VGE= 15 V
IC = 7 A
RG = 10Ω
VCC = 480 V
RG = 10 Ω
Tj = 125 oC
IC = 7 A
VGE = 15 V
Min.
Typ.
15
48
160
185
Max.
Unit
ns
ns
A/µs
µJ
2/9
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