STGW20NC60VD View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
'STGW20NC60VD' PDF : 11 Pages View PDF
Figure 15: Thermal Impedance
STGW20NC60VD
Figure 18: Ic vs Frequency
Figure 16: Turn-Off SOA
Figure 17: Emitter-Collector Diode Character-
istics
For a fast IGBT suitable for high frequency appli-
cations, the typical collector current vs. maximum
operating frequency curve is reported. That fre-
quency is defined as follows:
fMAX = (PD - PC) / (EON + EOFF)
1) The maximum power dissipation is limited by
maximum junction to case thermal resistance:
PD = ∆T / RTHJ-C
considering ∆T = TJ - TC = 125 °C- 75 °C = 50°C
2) The conduction losses are:
PC = IC * VCE(SAT) * δ
with 50% of duty cycle, VCESAT typical value
@125°C.
3) Power dissipation during ON & OFF commuta-
tions is due to the switching frequency:
PSW = (EON + EOFF) * freq.
4) Typical values @ 125°C for switching losses are
used (test conditions: VCE = 390V, VGE = 15V,
RG = 3.3 Ohm). Furthermore, diode recovery en-
ergy is included in the EON (see note 2), while the
tail of the collector current is included in the EOFF
measurements (see note 3).
7/11
Share Link: 
