STI11NM60ND View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
STI11NM60ND
STMicroelectronics
'STI11NM60ND' PDF : 19 Pages View PDF
Electrical characteristics
STD/F/I/P/U11NM60ND
Table 7. Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
VDD = 300 V, ID = 5 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 18)
Min Typ Max Unit
16
ns
7
ns
-
-
50
ns
9
ns
Table 8.
Symbol
Source drain diode
Parameter
Test conditions
Min Typ Max Unit
ISD Source-drain current
ISDM (1) Source-drain current (pulsed)
-
VSD(2) Forward on voltage
ISD = 10 A, VGS=0
-
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD =10 A, di/dt =100 A/µs,
VDD = 100 V
-
(see Figure 20)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
VDD = 100 V
di/dt =100 A/µs, ISD = 10 A -
Tj = 150 °C (see Figure 20)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
10 A
40 A
1.3 V
130
ns
0.69
µC
11
A
200
ns
1.2
µC
12
A
6/19
Doc ID 14625 Rev 2
Share Link: 