STL13NM60N View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
STL13NM60N
STMicroelectronics
'STL13NM60N' PDF : 16 Pages View PDF
STL13NM60N
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
VDS Drain-source voltage
600
VGS
ID (1)
ID (1)
ID(2)
ID(2)
IDM(2),(3)
Gate-source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (continuous) at Tamb = 25 °C
Drain current (continuous) at Tamb = 100 °C
Drain current (pulsed)
± 30
10
6.5
1.9
1.1
7.6
PTOT (2) Total dissipation at Tamb = 25 °C
3
PTOT(1) Total dissipation at TC = 25 °C
90
IAR
Avalanche current, repetitive or not-
repetitive (pulse width limited by Tj max)
3
Single pulse avalanche energy
EAS (starting Tj = 25 °C, ID = IAR, VDD = 50 V)
93
dv/dt (4) Peak diode recovery voltage slope
15
Tstg Storage temperature
Tj Max. operating junction temperature
- 55 to 150
150
1. The value is rated according to Rthj-case
2. When mounted on 1inch² FR-4 board, 2 oz Cu
3. Pulse width limited by safe operating area
4. ISD ≤ 10 A, di/dt ≤ 400 A/µs, VDSpeak ≤ V(BR)DSS, VDD = 80% V(BR)DSS
Symbol
Table 3. Thermal data
Parameter
Rthj-case Thermal resistance junction-case max
Rthj-amb(1) Thermal resistance junction-amb max
1. When mounted on 1inch² FR-4 board, 2 oz Cu
Value
1.39
42
Unit
V
V
A
A
A
A
A
W
W
A
mJ
V/ns
°C
°C
Unit
°C/W
°C/W
DocID018870 Rev 2
3/16
16
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